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Low temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors

dc.contributor.authorBeer, Chris
dc.contributor.authorWhall, Terry
dc.contributor.authorParker, Evan
dc.contributor.authorLeadley, David
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorNicholas, Gareth
dc.contributor.authorZimmerman, Paul
dc.contributor.authorMeuris, Marc
dc.contributor.authorSzostak, Slawomir
dc.contributor.authorGluszko, Grzegorz
dc.contributor.authorLukasiak, Lidia
dc.date.accessioned2021-10-16T15:03:19Z
dc.date.available2021-10-16T15:03:19Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11708
dc.sourceIIOimport
dc.titleLow temperature mobility in hafnium-oxide gated germanium p-channel metal-oxide-semiconductor field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage263512
dc.source.journalApplied Physics Letters
dc.source.issue26
dc.source.volume91
imec.availabilityPublished - open access


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