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Comparing GaAs and In0.15Ga0.85As as channel material for alternative substrate CMOS

dc.contributor.authorBrammertz, Guy
dc.contributor.authorHeyns, Marc
dc.contributor.authorMeuris, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.authorJiang, Dehuai
dc.date.accessioned2021-10-16T15:09:51Z
dc.date.available2021-10-16T15:09:51Z
dc.date.issued2007-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11793
dc.sourceIIOimport
dc.titleComparing GaAs and In0.15Ga0.85As as channel material for alternative substrate CMOS
dc.typeJournal article
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpage2154
dc.source.endpage2157
dc.source.journalMicroelectronic Engineering
dc.source.issue9_10
dc.source.volume84
imec.availabilityPublished - imec
imec.internalnotesPaper from INFOS 2007


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