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Asymmetric strain relaxation in patterned SiGe layer: a means to enhance carrier mobilities in Si cap layers

dc.contributor.authorBuca, D.
dc.contributor.authorHollander, B.
dc.contributor.authorFeste, S.
dc.contributor.authorLenk, S.
dc.contributor.authorTrinkaus, H.
dc.contributor.authorMantl, S.
dc.contributor.authorLoo, Roger
dc.contributor.authorCaymax, Matty
dc.date.accessioned2021-10-16T15:13:01Z
dc.date.available2021-10-16T15:13:01Z
dc.date.issued2007-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11824
dc.sourceIIOimport
dc.titleAsymmetric strain relaxation in patterned SiGe layer: a means to enhance carrier mobilities in Si cap layers
dc.typeJournal article
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorCaymax, Matty
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.source.peerreviewno
dc.source.beginpage32108
dc.source.journalApplied Physics Letters
dc.source.issue3
dc.source.volume90
imec.availabilityPublished - imec


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