dc.contributor.author | Chang, Shou-Zen | |
dc.contributor.author | Yu, HongYu | |
dc.contributor.author | Veloso, Anabela | |
dc.contributor.author | Lauwers, Anne | |
dc.contributor.author | Delabie, Annelies | |
dc.contributor.author | Everaert, Jean-Luc | |
dc.contributor.author | Kerner, Christoph | |
dc.contributor.author | Absil, Philippe | |
dc.contributor.author | Hoffmann, Thomas Y. | |
dc.contributor.author | Biesemans, Serge | |
dc.date.accessioned | 2021-10-16T15:14:42Z | |
dc.date.available | 2021-10-16T15:14:42Z | |
dc.date.issued | 2007 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/11839 | |
dc.source | IIOimport | |
dc.title | The application of an ultra-thin ALD HfSiON cap layer on SiON dielectrics for Ni-FUSI CMOS technology targeting at low power applications | |
dc.type | Journal article | |
dc.contributor.imecauthor | Veloso, Anabela | |
dc.contributor.imecauthor | Lauwers, Anne | |
dc.contributor.imecauthor | Delabie, Annelies | |
dc.contributor.imecauthor | Everaert, Jean-Luc | |
dc.contributor.imecauthor | Kerner, Christoph | |
dc.contributor.imecauthor | Absil, Philippe | |
dc.contributor.imecauthor | Biesemans, Serge | |
dc.source.peerreview | no | |
dc.source.beginpage | 634 | |
dc.source.endpage | 636 | |
dc.source.journal | IEEE Electron Device Letters | |
dc.source.issue | 7 | |
dc.source.volume | 28 | |
imec.availability | Published - imec | |