Show simple item record

dc.contributor.authorChauhan, Y.
dc.contributor.authorKrummenacher, F.
dc.contributor.authorGillon, R.
dc.contributor.authorBakeroot, Benoit
dc.contributor.authorDeclercq, M.
dc.contributor.authorIonescu, A.
dc.date.accessioned2021-10-16T15:15:19Z
dc.date.available2021-10-16T15:15:19Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11843
dc.sourceIIOimport
dc.titleCompact modeling of lateral nonuniform doping in high-voltage MOSFETs
dc.typeJournal article
dc.contributor.imecauthorBakeroot, Benoit
dc.contributor.orcidimecBakeroot, Benoit::0000-0003-4392-1777
dc.source.peerreviewno
dc.source.beginpage1527
dc.source.endpage1539
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue6
dc.source.volume54
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record