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Single crystalline GaN grown on porous Si(111) by MOVPE

dc.contributor.authorCheng, Kai
dc.contributor.authorDegroote, Stefan
dc.contributor.authorLeys, Maarten
dc.contributor.authorVan Daele, Benny
dc.contributor.authorGermain, Marianne
dc.contributor.authorVan Tendeloo, Gustaaf
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T15:15:46Z
dc.date.available2021-10-16T15:15:46Z
dc.date.issued2007-06
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11847
dc.sourceIIOimport
dc.titleSingle crystalline GaN grown on porous Si(111) by MOVPE
dc.typeJournal article
dc.contributor.imecauthorBorghs, Gustaaf
dc.source.peerreviewno
dc.source.beginpage1908
dc.source.endpage1912
dc.source.journalPhysica Status Solidi C
dc.source.issue6
dc.source.volume4
imec.availabilityPublished - imec


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