Importance of determining the polysilicon dopant profile during process development

dc.contributor.author	Debusschere, Ingrid
dc.contributor.author	Deferm, Ludo
dc.contributor.author	Vandervorst, Wilfried
dc.date.accessioned	2021-09-29T14:24:59Z
dc.date.available	2021-09-29T14:24:59Z
dc.date.issued	1996
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/1185
dc.source	IIOimport
dc.title	Importance of determining the polysilicon dopant profile during process development
dc.type	Journal article
dc.contributor.imecauthor	Debusschere, Ingrid
dc.contributor.imecauthor	Deferm, Ludo
dc.contributor.imecauthor	Vandervorst, Wilfried
dc.date.embargo	9999-12-31
dc.source.peerreview	no
dc.source.beginpage	265
dc.source.endpage	271
dc.source.journal	Journal of Vacuum Science and Technology B
dc.source.issue	1
dc.source.volume	14
imec.availability	Published - open access
imec.internalnotes	Paper from the 3rd International workshop on the measurement and characterization of ultra-shallow doping profiles in semiconductors. Research Triangle Park, North Carolina, USA. March 1995.