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dc.contributor.authorCho, Moon Ju
dc.contributor.authorDegraeve, Robin
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorDelabie, Annelies
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorHwang, cheol seong
dc.date.accessioned2021-10-16T15:17:32Z
dc.date.available2021-10-16T15:17:32Z
dc.date.issued2007-04
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11860
dc.sourceIIOimport
dc.titleStudy of the reliability impact of chlorine precursor residues in the Atomic Layer Deposited HfO2 layers
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage752
dc.source.endpage758
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue4
dc.source.volume54
imec.availabilityPublished - imec


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