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Impact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors

dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.contributor.authorSrinivasan, Purushothaman
dc.contributor.authorMisra, D.
dc.date.accessioned2021-10-16T15:20:33Z
dc.date.available2021-10-16T15:20:33Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11883
dc.sourceIIOimport
dc.titleImpact of the gate-electrode/dielectric interface on the low-frequency noise of thin gate oxide n-channel metal-oxide-semiconductor field-effect transistors
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage627
dc.source.endpage632
dc.source.journalSolid-State Electronics
dc.source.issue4
dc.source.volume51
imec.availabilityPublished - imec
imec.internalnotesSelected papers from ULIS conference 2006


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