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A new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides

dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.date.accessioned2021-09-29T14:25:27Z
dc.date.available2021-09-29T14:25:27Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1189
dc.sourceIIOimport
dc.titleA new analytic model for the description of the intrinsic oxide breakdown statistics of ultra-thin oxides
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage1639
dc.source.endpage1642
dc.source.journalMicroelectronics and Reliability
dc.source.volume36
imec.availabilityPublished - imec
imec.internalnotesPaper from ESREF '96 - 7th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis. October 8-11, 1996. Enschede, The Netherlands.


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