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Monitoring plasma nitridation of HfSiOx by corona charge measurements

dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorShi, Xiaoping
dc.contributor.authorRothschild, Aude
dc.contributor.authorSchaekers, Marc
dc.contributor.authorRosseel, Erik
dc.contributor.authorPavelka, Tibor
dc.contributor.authorDon, Eric
dc.contributor.authorVanhaelemeersch, Serge
dc.date.accessioned2021-10-16T16:03:52Z
dc.date.available2021-10-16T16:03:52Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12138
dc.sourceIIOimport
dc.titleMonitoring plasma nitridation of HfSiOx by corona charge measurements
dc.typeJournal article
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorVanhaelemeersch, Serge
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecVanhaelemeersch, Serge::0000-0003-2102-7395
dc.source.peerreviewno
dc.source.beginpage2251
dc.source.endpage2254
dc.source.journalMicroelectronic Engineering
dc.source.issue9_10
dc.source.volume84
imec.availabilityPublished - imec
imec.internalnotesPaper from INFOS 2007


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