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Carrier lifetime dependence on doping, metal implants and excitation density in Ge and Si

dc.contributor.authorGaubas, E.
dc.contributor.authorVanhellemont, J.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorRomandic, I.
dc.contributor.authorGeens, W.
dc.contributor.authorClauws, P.
dc.date.accessioned2021-10-16T16:13:36Z
dc.date.available2021-10-16T16:13:36Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12183
dc.sourceIIOimport
dc.titleCarrier lifetime dependence on doping, metal implants and excitation density in Ge and Si
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage222
dc.source.endpage225
dc.source.journalPhysica B: Condensed Matter
dc.source.volume401-402
imec.availabilityPublished - open access


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