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Performance and reliability of strained-silicon nMOSFETs with SiN cap layer

dc.contributor.authorGiusi, G.
dc.contributor.authorCrupi, F.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorEneman, Geert
dc.contributor.authorJurczak, Gosia
dc.date.accessioned2021-10-16T16:17:47Z
dc.date.available2021-10-16T16:17:47Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12202
dc.sourceIIOimport
dc.titlePerformance and reliability of strained-silicon nMOSFETs with SiN cap layer
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.source.peerreviewno
dc.source.beginpage78
dc.source.endpage82
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue1
dc.source.volume54
imec.availabilityPublished - imec


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