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Observation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope

dc.contributor.authorFedina, L.
dc.contributor.authorVan Landuyt, J.
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorAseev, A. L.
dc.date.accessioned2021-09-29T14:28:56Z
dc.date.available2021-09-29T14:28:56Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1220
dc.sourceIIOimport
dc.titleObservation of vacancy clustering in FZ-Si crystals during in situ electron irradiation in a high voltage electron microscope
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage133
dc.source.endpage138
dc.source.journalNuclear Instruments and Methods in Physics Research B
dc.source.volumeB112
imec.availabilityPublished - open access
imec.internalnotesPaper presented at the E-MRS Symposium on Pushing the Limits of Ion Beam Processing. May 1995. Strasbourg, France.


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