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Temperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs

dc.contributor.authorGuo, W.
dc.contributor.authorCretu, B.
dc.contributor.authorRoutoure, J.M.
dc.contributor.authorCarin, R.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T16:26:20Z
dc.date.available2021-10-16T16:26:20Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12239
dc.sourceIIOimport
dc.titleTemperature impact on the Lorentzian noise induced by electron valence-band tunneling in partially depleted SOI p-MOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage1180
dc.source.endpage1184
dc.source.journalSolid-State Electronics
dc.source.issue9
dc.source.volume51
imec.availabilityPublished - imec
imec.internalnotesSelected papers from EUROSOI'07


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