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Gate oxide breakdown in FET devices and circuits: from nanoscale physics to system-level reliability

dc.contributor.authorKaczer, Ben
dc.contributor.authorDegraeve, Robin
dc.contributor.authorRoussel, Philippe
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-16T17:00:28Z
dc.date.available2021-10-16T17:00:28Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12375
dc.sourceIIOimport
dc.titleGate oxide breakdown in FET devices and circuits: from nanoscale physics to system-level reliability
dc.typeJournal article
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage559
dc.source.endpage566
dc.source.journalMicroelectronics Reliability
dc.source.issue4_5
dc.source.volume47
imec.availabilityPublished - open access


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