Show simple item record

Growth and characterization of mid-infrared InGaAs/InAlAs strained triple quantum-well light-emitting diodes grown on lattice-mismatched GaAs substrates

dc.contributor.authorGrietens, Bob
dc.contributor.authorVan Hoof, Chris
dc.contributor.authorVan Daele, Peter
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-09-29T14:31:16Z
dc.date.available2021-09-29T14:31:16Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1239
dc.sourceIIOimport
dc.titleGrowth and characterization of mid-infrared InGaAs/InAlAs strained triple quantum-well light-emitting diodes grown on lattice-mismatched GaAs substrates
dc.typeJournal article
dc.contributor.imecauthorVan Hoof, Chris
dc.contributor.imecauthorVan Daele, Peter
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecVan Daele, Peter::0000-0003-0557-7741
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage4177
dc.source.endpage4181
dc.source.journalJournal of Applied Physics
dc.source.issue7
dc.source.volume80
imec.availabilityPublished - open access


Files in this item

Thumbnail
Name:
1214.pdf
Size:
484.2Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record