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Direct evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25 nm Ni fully silicided gates

dc.contributor.authorKittl, Jorge
dc.contributor.authorLauwers, Anne
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorVrancken, Christa
dc.contributor.authorKubicek, Stefan
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T17:07:48Z
dc.date.available2021-10-16T17:07:48Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12403
dc.sourceIIOimport
dc.titleDirect evidence of linewidth effect: Ni31Si12 and Ni3Si formation on 25 nm Ni fully silicided gates
dc.typeJournal article
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.source.peerreviewno
dc.source.beginpage172107
dc.source.journalApplied Physics Letters
dc.source.issue17
dc.source.volume90
imec.availabilityPublished - imec


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