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Work function of Ni3Si2 on HfSixOy and SiO2 and its implication for Ni fully silicided gate applications

dc.contributor.authorKittl, Jorge
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorKaushik, Vidya
dc.contributor.authorLauwers, Anne
dc.contributor.authorPawlak, M.A.
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorDemeurisse, Caroline
dc.contributor.authorVrancken, Christa
dc.contributor.authorVeloso, Anabela
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T17:08:27Z
dc.date.available2021-10-16T17:08:27Z
dc.date.issued2007-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12405
dc.sourceIIOimport
dc.titleWork function of Ni3Si2 on HfSixOy and SiO2 and its implication for Ni fully silicided gate applications
dc.typeJournal article
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorDemeurisse, Caroline
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.source.peerreviewno
dc.source.beginpage32103
dc.source.journalApplied Physics Letters
dc.source.issue3
dc.source.volume90
imec.availabilityPublished - imec


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