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Low temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors

dc.contributor.authorLartigau, I.
dc.contributor.authorRoutoure, J.M.
dc.contributor.authorGuo, W.
dc.contributor.authorCretu, B.
dc.contributor.authorCarin, R.
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorClaeys, Cor
dc.contributor.authorSimoen, Eddy
dc.date.accessioned2021-10-16T17:16:58Z
dc.date.available2021-10-16T17:16:58Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12437
dc.sourceIIOimport
dc.titleLow temperature noise spectroscopy of 0.1 μm partially depleted silicon on insulator metal-oxide-semiconductor field effect transistors
dc.typeJournal article
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.source.peerreviewno
dc.source.beginpage104511
dc.source.journalJournal of Applied Physics
dc.source.issue10
dc.source.volume101
imec.availabilityPublished - imec


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