Show simple item record

dc.contributor.authorLorenz, Anne
dc.contributor.authorJohn, Joachim
dc.contributor.authorDerluyn, Joff
dc.contributor.authorCheng, Kai
dc.contributor.authorGermain, Marianne
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T17:38:36Z
dc.date.available2021-10-16T17:38:36Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12514
dc.sourceIIOimport
dc.titleBreakdown voltage mechanisms in AlGaN switching diodes
dc.typeProceedings paper
dc.contributor.imecauthorJohn, Joachim
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage53
dc.source.endpage55
dc.source.conference31st Workshop on Compound Semiconductor Devices and Integrated Circuits - WOCSDICE
dc.source.conferencedate20/05/2007
dc.source.conferencelocationVenice Italy
imec.availabilityPublished - open access


Files in this item

Thumbnail

This item appears in the following collection(s)

Show simple item record