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Study of intrinsically carbon doped AlGaAs layers for tunnel diodes in multi-junction solar cells

dc.contributor.authorMols, Yves
dc.contributor.authorLeys, Maarten
dc.contributor.authorSimons, Eddy
dc.contributor.authorPoortmans, Jef
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T18:00:57Z
dc.date.available2021-10-16T18:00:57Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12588
dc.sourceIIOimport
dc.titleStudy of intrinsically carbon doped AlGaAs layers for tunnel diodes in multi-junction solar cells
dc.typeJournal article
dc.contributor.imecauthorMols, Yves
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.imecauthorBorghs, Gustaaf
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewyes
dc.source.beginpage758
dc.source.endpage761
dc.source.journalJournal of Crystal Growth
dc.source.volume298
imec.availabilityPublished - imec
imec.internalnotesICMOVPE-XIII paper (2006, Japan)


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