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Lifetime modeling of intrinsic gate oxide breakdown at high temperature

dc.contributor.authorMoonen, R.
dc.contributor.authorVanmeerbeek, P.
dc.contributor.authorLekens, Geert
dc.contributor.authorDe Ceuninck, Ward
dc.contributor.authorMoens, P.
dc.contributor.authorBoutsen, J.
dc.date.accessioned2021-10-16T18:02:10Z
dc.date.available2021-10-16T18:02:10Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12592
dc.sourceIIOimport
dc.titleLifetime modeling of intrinsic gate oxide breakdown at high temperature
dc.typeJournal article
dc.contributor.imecauthorLekens, Geert
dc.contributor.imecauthorDe Ceuninck, Ward
dc.source.peerreviewno
dc.source.beginpage1389
dc.source.endpage1393
dc.source.journalMicroelectronics Reliability
dc.source.issue9_11
dc.source.volume47
imec.availabilityPublished - imec


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