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Germanium MOSFETs with CeO2/HfO2/TiN gate stacks

dc.contributor.authorNicholas, Gareth
dc.contributor.authorBrunco, David
dc.contributor.authordimoulas, A.
dc.contributor.authorVan Steenbergen, Jan
dc.contributor.authorBellenger, Florence
dc.contributor.authorHoussa, Michel
dc.contributor.authorCaymax, Matty
dc.contributor.authorMeuris, Marc
dc.contributor.authorPanayiotatos, Y.
dc.contributor.authorSotiropoulos, A.
dc.date.accessioned2021-10-16T18:10:23Z
dc.date.available2021-10-16T18:10:23Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12619
dc.sourceIIOimport
dc.titleGermanium MOSFETs with CeO2/HfO2/TiN gate stacks
dc.typeJournal article
dc.contributor.imecauthorVan Steenbergen, Jan
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage1425
dc.source.endpage1430
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue6
dc.source.volume54
imec.availabilityPublished - open access


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