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Threshold voltage shifts in Si passivated (100)Ge p-channel field effect transistors: Insights from first-principles modeling

dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorHoussa, Michel
dc.contributor.authorDe Jaeger, Brice
dc.contributor.authorKaczer, Ben
dc.contributor.authorLeys, Frederik
dc.contributor.authorMeuris, Marc
dc.contributor.authorCaymax, Matty
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T18:48:32Z
dc.date.available2021-10-16T18:48:32Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12738
dc.sourceIIOimport
dc.titleThreshold voltage shifts in Si passivated (100)Ge p-channel field effect transistors: Insights from first-principles modeling
dc.typeJournal article
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorDe Jaeger, Brice
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorMeuris, Marc
dc.contributor.imecauthorCaymax, Matty
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecDe Jaeger, Brice::0000-0001-8804-7556
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.source.peerreviewno
dc.source.beginpage23506
dc.source.journalApplied Physics Letters
dc.source.issue2
dc.source.volume91
dc.identifier.urlhttp://scitation.aip.org/vsearch/servlet/VerityServlet?KEY=APPLAB&ONLINE=YES&smode=strresults&sort=chron&maxdisp=25&threshold=0&
imec.availabilityPublished - imec


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