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Gate induced floating body effects in TiN/SiON and TiN/HfO2 triple gate SOI FinFETs

dc.contributor.authorRafi, J.M.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMercha, Abdelkarim
dc.contributor.authorCollaert, Nadine
dc.contributor.authorHayama, K.
dc.contributor.authorCampabadal, F.
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T18:52:17Z
dc.date.available2021-10-16T18:52:17Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12749
dc.sourceIIOimport
dc.titleGate induced floating body effects in TiN/SiON and TiN/HfO2 triple gate SOI FinFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorMercha, Abdelkarim
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecMercha, Abdelkarim::0000-0002-2174-6958
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage1201
dc.source.endpage1210
dc.source.journalSolid-State Electronics
dc.source.issue9
dc.source.volume51
imec.availabilityPublished - imec
imec.internalnotesSelected papers from EUROSOI'07


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