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Theoretical study of tunneling current in the access region of various heterojunction field-effect transistor structures

dc.contributor.authorJansen, Philippe
dc.contributor.authorMizuta, H.
dc.contributor.authorYamaguchi, K.
dc.contributor.authorWagner, M.
dc.date.accessioned2021-09-29T14:36:35Z
dc.date.available2021-09-29T14:36:35Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1280
dc.sourceIIOimport
dc.titleTheoretical study of tunneling current in the access region of various heterojunction field-effect transistor structures
dc.typeJournal article
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage3603
dc.source.endpage3607
dc.source.journalJournal of Applied Physics
dc.source.issue7
dc.source.volume79
imec.availabilityPublished - open access


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