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Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF

dc.contributor.authorSan Andres Serrano, Enrique
dc.contributor.authorPantisano, Luigi
dc.contributor.authorRamos, Javier
dc.contributor.authorRoussel, Philippe
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorToledano Luque, Maria
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-16T19:21:48Z
dc.date.available2021-10-16T19:21:48Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12836
dc.sourceIIOimport
dc.titleAccurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF
dc.typeJournal article
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage1705
dc.source.endpage1712
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue7
dc.source.volume54
imec.availabilityPublished - imec


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