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Subthreshold channels at the edges of nanoscale triple-gate silicon transistors

dc.contributor.authorSellier, H.
dc.contributor.authorLansbergen, G.P.
dc.contributor.authorCaro, J.
dc.contributor.authorRogge, Sven
dc.contributor.authorCollaert, Nadine
dc.contributor.authorFerain, Isabelle
dc.contributor.authorJurczak, Gosia
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T19:34:01Z
dc.date.available2021-10-16T19:34:01Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12872
dc.sourceIIOimport
dc.titleSubthreshold channels at the edges of nanoscale triple-gate silicon transistors
dc.typeJournal article
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.source.peerreviewno
dc.source.beginpage73502
dc.source.journalApplied Physics Letters
dc.source.issue7
dc.source.volume90
imec.availabilityPublished - imec


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