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The low-frequency noise behaviour of graded-channel SOI nMOSFETs

dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorChung, T.M.
dc.contributor.authorFlandre, D.
dc.contributor.authorPavanello, M.A.
dc.contributor.authorMartino, J.A.
dc.contributor.authorRaskin, J.P.
dc.date.accessioned2021-10-16T19:44:45Z
dc.date.available2021-10-16T19:44:45Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12902
dc.sourceIIOimport
dc.titleThe low-frequency noise behaviour of graded-channel SOI nMOSFETs
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage260
dc.source.endpage267
dc.source.journalSolid-State Electronics
dc.source.issue2
dc.source.volume51
imec.availabilityPublished - open access
imec.internalnotesPaper from EUROSOI 2006


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