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On the low-frequency noise of pMOSFETs with embedded SiGe source/drain and fully silicided metal gate

dc.contributor.authorSimoen, Eddy
dc.contributor.authorVerheyen, Peter
dc.contributor.authorShickova, Adelina
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T19:47:56Z
dc.date.available2021-10-16T19:47:56Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12911
dc.sourceIIOimport
dc.titleOn the low-frequency noise of pMOSFETs with embedded SiGe source/drain and fully silicided metal gate
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage987
dc.source.endpage989
dc.source.journalIEEE Electron Device Letters
dc.source.issue11
dc.source.volume28
imec.availabilityPublished - open access


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