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The study of effective work function modulation by As ion implantation in TiN/TaN/HfO2 stacks.

dc.contributor.authorSinganamalla, Raghunath
dc.contributor.authorYu, HongYu
dc.contributor.authorJanssens, Tom
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Meyer, Kristin
dc.date.accessioned2021-10-16T19:49:32Z
dc.date.available2021-10-16T19:49:32Z
dc.date.issued2007-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12915
dc.sourceIIOimport
dc.titleThe study of effective work function modulation by As ion implantation in TiN/TaN/HfO2 stacks.
dc.typeJournal article
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Meyer, Kristin
dc.source.peerreviewno
dc.source.beginpageL320
dc.source.endpageL322
dc.source.journalJapanese Journal of Applied Physics. Part 2: Letters
dc.source.issue14
dc.source.volume46
imec.availabilityPublished - imec


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