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Interfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks

dc.contributor.authorSrinivasan, Purushothaman
dc.contributor.authorCrupi, F.
dc.contributor.authorSimoen, Eddy
dc.contributor.authorMagnone, P.
dc.contributor.authorPace, C.
dc.contributor.authorMisra, D.
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-16T19:57:26Z
dc.date.available2021-10-16T19:57:26Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12938
dc.sourceIIOimport
dc.titleInterfacial layer quality effects on low-frequency noise (1/f) in p-MOSFETs with advanced gate stacks
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage501
dc.source.endpage504
dc.source.journalMicroelectronics Reliability
dc.source.issue4_5
dc.source.volume47
imec.availabilityPublished - open access
imec.internalnotesPaper from WoDiM 2006


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