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Void growth modeling upon electromigration stressing in single damascene cu lines

dc.contributor.authorTio Castro, David
dc.contributor.authorHoofman, Romano
dc.contributor.authorMichelon, Julien
dc.contributor.authorBruynseraede, Christophe
dc.date.accessioned2021-10-16T20:10:19Z
dc.date.available2021-10-16T20:10:19Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12975
dc.sourceIIOimport
dc.titleVoid growth modeling upon electromigration stressing in single damascene cu lines
dc.typeJournal article
dc.contributor.imecauthorHoofman, Romano
dc.contributor.orcidimecHoofman, Romano::0000-0001-8740-104X
dc.source.peerreviewno
dc.source.beginpage123515
dc.source.journalJournal of Applied Physics
dc.source.issue12
dc.source.volume102
dc.identifier.urlhttp://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=JAPIAU000102000012123515000001&idtype=cvips&gifs=yes
imec.availabilityPublished - imec


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