Show simple item record

High-k metal gate MOSFETs: Impact of extrinsic process condition on the gate-stack quality. A mobility study

dc.contributor.authorTrojman, Lionel
dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorO'Sullivan, Barry
dc.contributor.authorRosmeulen, Maarten
dc.contributor.authorKaushik, Vidya
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorMaes, Herman
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.date.accessioned2021-10-16T20:18:16Z
dc.date.available2021-10-16T20:18:16Z
dc.date.issued2007-03
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12995
dc.sourceIIOimport
dc.titleHigh-k metal gate MOSFETs: Impact of extrinsic process condition on the gate-stack quality. A mobility study
dc.typeJournal article
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorO'Sullivan, Barry
dc.contributor.imecauthorRosmeulen, Maarten
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecO'Sullivan, Barry::0000-0002-9036-8241
dc.contributor.orcidimecRosmeulen, Maarten::0000-0002-3663-7439
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.source.peerreviewno
dc.source.beginpage497
dc.source.endpage503
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue3
dc.source.volume54
imec.availabilityPublished - imec


Files in this item

FilesSizeFormatView

There are no files associated with this item.

This item appears in the following collection(s)

Show simple item record