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Modifications in the Si valence band after ion-beam-induced oxidation

dc.contributor.authorAlay, Josep Lluis
dc.contributor.authorVandervorst, Wilfried
dc.date.accessioned2021-09-29T12:39:40Z
dc.date.available2021-09-29T12:39:40Z
dc.date.issued1994
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/12
dc.sourceIIOimport
dc.titleModifications in the Si valence band after ion-beam-induced oxidation
dc.typeJournal article
dc.contributor.imecauthorVandervorst, Wilfried
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2420
dc.source.endpage2424
dc.source.journalJournal of Vacuum Science and Technology A
dc.source.issue4
dc.source.volume12
imec.availabilityPublished - open access
imec.internalnotesPaper from the 40th American Vacuum Society Meeting; 15-19 November 1993; Orlando, FL, USA


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