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Investigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography

dc.contributor.authorKissinger, G.
dc.contributor.authorVanhellemont, Jan
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.authorRichter, H.
dc.date.accessioned2021-09-29T14:39:31Z
dc.date.available2021-09-29T14:39:31Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1301
dc.sourceIIOimport
dc.titleInvestigation of oxygen precipitation related crystal defects in processed silicon wafers by infrared light scattering tomography
dc.typeJournal article
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage225
dc.source.endpage229
dc.source.journalMaterials Science and Engineering B
dc.source.volumeB36
imec.availabilityPublished - open access
imec.internalnotesPaper presented at the E-MRS Symposium on Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in Other Elemental Semiconductors. May 1995. Strasbourg, France.


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