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Electrical activity of intragrain defects in polycrystalline silicon layers obtained by aluminium-induced crystallization and epitaxy

dc.contributor.authorVan Gestel, Dries
dc.contributor.authorRomero, M.J.
dc.contributor.authorGordon, Ivan
dc.contributor.authorCarnel, Lodewijk
dc.contributor.authorD'Haen, Jan
dc.contributor.authorBeaucarne, Guy
dc.contributor.authorAl-Jassim, M.
dc.contributor.authorPoortmans, Jef
dc.date.accessioned2021-10-16T20:40:15Z
dc.date.available2021-10-16T20:40:15Z
dc.date.issued2007-02
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13056
dc.sourceIIOimport
dc.titleElectrical activity of intragrain defects in polycrystalline silicon layers obtained by aluminium-induced crystallization and epitaxy
dc.typeJournal article
dc.contributor.imecauthorGordon, Ivan
dc.contributor.imecauthorD'Haen, Jan
dc.contributor.imecauthorPoortmans, Jef
dc.contributor.orcidimecGordon, Ivan::0000-0002-0713-8403
dc.contributor.orcidimecPoortmans, Jef::0000-0003-2077-2545
dc.source.peerreviewno
dc.source.beginpage92103
dc.source.journalApplied Physics Letters
dc.source.issue9
dc.source.volume90
imec.availabilityPublished - imec


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