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GaN based high electron mobility transistor technology and physics

dc.contributor.authorWang, Wenfei
dc.date.accessioned2021-10-16T21:37:53Z
dc.date.available2021-10-16T21:37:53Z
dc.date.issued2007-05
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13210
dc.sourceIIOimport
dc.titleGaN based high electron mobility transistor technology and physics
dc.typePHD thesis
dc.contributor.imecauthorWang, Wenfei
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.contributor.thesisadvisorNauwelaers, Bart
dc.contributor.thesisadvisorSchreurs, Dominique
imec.availabilityPublished - open access


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