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Work function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices

dc.contributor.authorWang, X.P.
dc.contributor.authorLim, A.E.J.
dc.contributor.authorYu, HongYu
dc.contributor.authorLi, M.F.
dc.contributor.authorRen, C.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorZhu, C.X
dc.contributor.authorChin, A.
dc.contributor.authorTrigg, A.D.
dc.contributor.authorYeo, Y.C.
dc.contributor.authorBiesemans, Serge
dc.contributor.authorLo, G.Q.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2021-10-16T21:39:11Z
dc.date.available2021-10-16T21:39:11Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13213
dc.sourceIIOimport
dc.titleWork function tunability of refractory metal nitrides by lanthanum or aluminum doping for advanced CMOS devices
dc.typeJournal article
dc.contributor.imecauthorBiesemans, Serge
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage2871
dc.source.endpage2877
dc.source.journalIEEE Trans. Electron Devices
dc.source.issue11
dc.source.volume54
imec.availabilityPublished - open access


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