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Wide Vfb and Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics

dc.contributor.authorWang, X.P.
dc.contributor.authorYu, HongYu
dc.contributor.authorLi, M.F
dc.contributor.authorZhu, C.X.
dc.contributor.authorBiesemans, Serge
dc.contributor.authorChin, A.
dc.contributor.authorSun, Y.
dc.contributor.authorFeng, Y.
dc.contributor.authorLim, A.
dc.contributor.authorYeo, Y.C.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorLo, G.Q.
dc.contributor.authorKwong, D.L
dc.date.accessioned2021-10-16T21:40:06Z
dc.date.available2021-10-16T21:40:06Z
dc.date.issued2007-04
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13215
dc.sourceIIOimport
dc.titleWide Vfb and Vth tunability for metal-gated MOS devices with HfLaO gate dielectrics
dc.typeJournal article
dc.contributor.imecauthorBiesemans, Serge
dc.source.peerreviewno
dc.source.beginpage258
dc.source.endpage260
dc.source.journalIEEE Electron Device Letters
dc.source.issue4
dc.source.volume28
imec.availabilityPublished - imec


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