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Demonstration of low Vt Ni-FUSI N-MOSFETs with SiON dielectrics by using a Dy2O3 cap layer

dc.contributor.authorYu, HongYu
dc.contributor.authorChang, Shou-Zen
dc.contributor.authorVeloso, Anabela
dc.contributor.authorLauwers, Anne
dc.contributor.authorAdelmann, Christoph
dc.contributor.authorOnsia, Bart
dc.contributor.authorLehnen, Peer
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorBrus, Stephan
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.date.accessioned2021-10-16T21:53:29Z
dc.date.available2021-10-16T21:53:29Z
dc.date.issued2007-11
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13249
dc.sourceIIOimport
dc.titleDemonstration of low Vt Ni-FUSI N-MOSFETs with SiON dielectrics by using a Dy2O3 cap layer
dc.typeJournal article
dc.contributor.imecauthorVeloso, Anabela
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorAdelmann, Christoph
dc.contributor.imecauthorOnsia, Bart
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecAdelmann, Christoph::0000-0002-4831-3159
dc.source.peerreviewno
dc.source.beginpage957
dc.source.endpage959
dc.source.journalIEEE Electron Device Letters
dc.source.issue11
dc.source.volume28
imec.availabilityPublished - imec


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