Advanced Ni-based FUlly SIlicidation (FUSI) technology for low-Vt CMOS devices
dc.contributor.author | Yu, HongYu | |
dc.contributor.author | Veloso, Anabela | |
dc.contributor.author | Lauwers, Anne | |
dc.contributor.author | Biesemans, Serge | |
dc.date.accessioned | 2021-10-16T21:55:59Z | |
dc.date.available | 2021-10-16T21:55:59Z | |
dc.date.issued | 2007 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/13254 | |
dc.source | IIOimport | |
dc.title | Advanced Ni-based FUlly SIlicidation (FUSI) technology for low-Vt CMOS devices | |
dc.type | Proceedings paper | |
dc.contributor.imecauthor | Veloso, Anabela | |
dc.contributor.imecauthor | Lauwers, Anne | |
dc.contributor.imecauthor | Biesemans, Serge | |
dc.source.peerreview | no | |
dc.source.conference | Semicon Japan - STS | |
dc.source.conferencedate | 5/12/2007 | |
dc.source.conferencelocation | Chiba Japan | |
imec.availability | Published - imec |
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