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Impact of process conditions on interface and high-k trap density studied by variable Tcharge-Tdischarge charge pumping (VT2CP)

dc.contributor.authorZahid, Mohammed
dc.contributor.authorDegraeve, Robin
dc.contributor.authorZhang, John
dc.contributor.authorGroeseneken, Guido
dc.date.accessioned2021-10-16T21:56:47Z
dc.date.available2021-10-16T21:56:47Z
dc.date.issued2007-09
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13256
dc.sourceIIOimport
dc.titleImpact of process conditions on interface and high-k trap density studied by variable Tcharge-Tdischarge charge pumping (VT2CP)
dc.typeJournal article
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.source.peerreviewno
dc.source.beginpage1951
dc.source.endpage1955
dc.source.journalMicroelectronic Engineering
dc.source.issue9_10
dc.source.volume84
dc.identifier.urlhttp://www.sciencedirect.com/science?_ob=ArticleURL&_udi=B6V0W-4NVM053-11&_user=799533&_rdoc=1&_fmt=&_orig=search&_sort=d&view=c
imec.availabilityPublished - imec
imec.internalnotesINFOS


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