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Misoriented domains in 0001)-GaN/(111)-Ge grown by molecular beam epitaxy

dc.contributor.authorZhang, Y.
dc.contributor.authorMcAleese, C.
dc.contributor.authorXiu, H.
dc.contributor.authorHumphreys, C.
dc.contributor.authorLieten, Ruben
dc.contributor.authorDegroote, Bart
dc.contributor.authorBorghs, Gustaaf
dc.date.accessioned2021-10-16T21:59:35Z
dc.date.available2021-10-16T21:59:35Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13263
dc.sourceIIOimport
dc.titleMisoriented domains in 0001)-GaN/(111)-Ge grown by molecular beam epitaxy
dc.typeJournal article
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorBorghs, Gustaaf
dc.date.embargo9999-12-31
dc.source.peerreviewno
dc.source.beginpage92125
dc.source.journalApplied Physics Letters
dc.source.issue9
dc.source.volume91
imec.availabilityPublished - open access


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