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Advanced USJ for high-k / metal gate CMOS devices

dc.contributor.authorAbsil, Philippe
dc.contributor.authorOrtolland, Claude
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorRosseel, Erik
dc.contributor.authorVerheyen, Peter
dc.contributor.authorVrancken, Christa
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorNoda, Tajii
dc.contributor.authorFelch, Susan
dc.contributor.authorSchreutelkamp, Rob
dc.contributor.authorHoffmann, Thomas Y.
dc.date.accessioned2021-10-17T06:13:14Z
dc.date.available2021-10-17T06:13:14Z
dc.date.issued2008
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13279
dc.sourceIIOimport
dc.titleAdvanced USJ for high-k / metal gate CMOS devices
dc.typeMeeting abstract
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorVrancken, Christa
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.source.peerreviewno
dc.source.beginpageE4.7
dc.source.conferenceMRS Spring Meeting Symposium E: Doping Engineering for Front-End Processing
dc.source.conferencedate24/03/2008
dc.source.conferencelocationSan Francisco, CA USA
imec.availabilityPublished - imec


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