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Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2

dc.contributor.authorAfanas'ev, V.V.
dc.contributor.authorStesmans, Andre
dc.contributor.authorDelabie, Annelies
dc.contributor.authorBellenger, Florence
dc.contributor.authorHoussa, Michel
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-17T06:13:23Z
dc.date.available2021-10-17T06:13:23Z
dc.date.issued2008
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13288
dc.sourceIIOimport
dc.titleElectronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2
dc.typeJournal article
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage22109
dc.source.journalApplied Physics Letters
dc.source.issue2
dc.source.volume92
imec.availabilityPublished - open access


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