dc.contributor.author | Afanas'ev, V.V. | |
dc.contributor.author | Stesmans, Andre | |
dc.contributor.author | Delabie, Annelies | |
dc.contributor.author | Bellenger, Florence | |
dc.contributor.author | Houssa, Michel | |
dc.contributor.author | Meuris, Marc | |
dc.date.accessioned | 2021-10-17T06:13:23Z | |
dc.date.available | 2021-10-17T06:13:23Z | |
dc.date.issued | 2008 | |
dc.identifier.issn | 0003-6951 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/13288 | |
dc.source | IIOimport | |
dc.title | Electronic structure of GeO2-passivated interfaces of (100)Ge with Al2O3 and HfO2 | |
dc.type | Journal article | |
dc.contributor.imecauthor | Stesmans, Andre | |
dc.contributor.imecauthor | Delabie, Annelies | |
dc.contributor.imecauthor | Houssa, Michel | |
dc.contributor.imecauthor | Meuris, Marc | |
dc.contributor.orcidimec | Houssa, Michel::0000-0003-1844-3515 | |
dc.contributor.orcidimec | Meuris, Marc::0000-0002-9580-6810 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 22109 | |
dc.source.journal | Applied Physics Letters | |
dc.source.issue | 2 | |
dc.source.volume | 92 | |
imec.availability | Published - open access | |