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Energy barriers at interfaces of 100GaAs with atomic layer deposited Al2O3 and HfO2

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorBadylevich, M
dc.contributor.authorStesmans, Andre
dc.contributor.authorBrammertz, Guy
dc.contributor.authorDelabie, Annelies
dc.contributor.authorSioncke, Sonja
dc.contributor.authorO'Mahony, A
dc.contributor.authorPovey, I M
dc.contributor.authorPemble, M E
dc.contributor.authorO'Connor, E
dc.contributor.authorHurley, P
dc.contributor.authorNewcomb, Simon
dc.date.accessioned2021-10-17T06:13:24Z
dc.date.available2021-10-17T06:13:24Z
dc.date.issued2008
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13289
dc.sourceIIOimport
dc.titleEnergy barriers at interfaces of 100GaAs with atomic layer deposited Al2O3 and HfO2
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorBrammertz, Guy
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecBrammertz, Guy::0000-0003-1404-7339
dc.source.peerreviewyes
dc.source.beginpage212104
dc.source.journalApplied Physics Letters
dc.source.issue21
dc.source.volume93
dc.identifier.urlhttp://scitation.aip.org/getabs/servlet/GetabsServlet?prog=normal&id=APPLAB000093000021212104000001&idtype=cvips&gifs=Yes
imec.availabilityPublished - imec


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