Show simple item record

Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams

dc.contributor.authorAfanasiev, Valeri
dc.contributor.authorStesmans, Andre
dc.contributor.authorDelabie, Annelies
dc.contributor.authorBellenger, Florence
dc.contributor.authorHoussa, Michel
dc.contributor.authorLieten, Ruben
dc.contributor.authorMerckling, Clement
dc.contributor.authorPenaud, Julien
dc.contributor.authorBrunco, David
dc.contributor.authorMeuris, Marc
dc.date.accessioned2021-10-17T06:13:26Z
dc.date.available2021-10-17T06:13:26Z
dc.date.issued2008
dc.identifier.issn1369-8001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13290
dc.sourceIIOimport
dc.titleInfluence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams
dc.typeJournal article
dc.contributor.imecauthorAfanasiev, Valeri
dc.contributor.imecauthorStesmans, Andre
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.imecauthorHoussa, Michel
dc.contributor.imecauthorLieten, Ruben
dc.contributor.imecauthorMerckling, Clement
dc.contributor.imecauthorMeuris, Marc
dc.contributor.orcidimecHoussa, Michel::0000-0003-1844-3515
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.contributor.orcidimecMeuris, Marc::0000-0002-9580-6810
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage230
dc.source.endpage235
dc.source.journalMaterials Science in Semiconductor Processing
dc.source.issue5_6
dc.source.volume11
imec.availabilityPublished - open access
imec.internalnotesE-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS


Files in this item

Thumbnail
Name:
18584.pdf
Size:
393.8Kb
Format:
PDF
View/open

This item appears in the following collection(s)

Show simple item record