dc.contributor.author | Afanasiev, Valeri | |
dc.contributor.author | Stesmans, Andre | |
dc.contributor.author | Delabie, Annelies | |
dc.contributor.author | Bellenger, Florence | |
dc.contributor.author | Houssa, Michel | |
dc.contributor.author | Lieten, Ruben | |
dc.contributor.author | Merckling, Clement | |
dc.contributor.author | Penaud, Julien | |
dc.contributor.author | Brunco, David | |
dc.contributor.author | Meuris, Marc | |
dc.date.accessioned | 2021-10-17T06:13:26Z | |
dc.date.available | 2021-10-17T06:13:26Z | |
dc.date.issued | 2008 | |
dc.identifier.issn | 1369-8001 | |
dc.identifier.uri | https://imec-publications.be/handle/20.500.12860/13290 | |
dc.source | IIOimport | |
dc.title | Influence of passivating interlayer on Ge/HfO2 and Ge/Al2O3 interface band diagrams | |
dc.type | Journal article | |
dc.contributor.imecauthor | Afanasiev, Valeri | |
dc.contributor.imecauthor | Stesmans, Andre | |
dc.contributor.imecauthor | Delabie, Annelies | |
dc.contributor.imecauthor | Houssa, Michel | |
dc.contributor.imecauthor | Lieten, Ruben | |
dc.contributor.imecauthor | Merckling, Clement | |
dc.contributor.imecauthor | Meuris, Marc | |
dc.contributor.orcidimec | Houssa, Michel::0000-0003-1844-3515 | |
dc.contributor.orcidimec | Merckling, Clement::0000-0003-3084-2543 | |
dc.contributor.orcidimec | Meuris, Marc::0000-0002-9580-6810 | |
dc.date.embargo | 9999-12-31 | |
dc.source.peerreview | yes | |
dc.source.beginpage | 230 | |
dc.source.endpage | 235 | |
dc.source.journal | Materials Science in Semiconductor Processing | |
dc.source.issue | 5_6 | |
dc.source.volume | 11 | |
imec.availability | Published - open access | |
imec.internalnotes | E-MRS 2008 Spring Conference Symposium J: Beyond Silicon Technology: Materials and Devices for Post-Si CMOS | |