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Insight into the aggravated lifetime reliability in advanced MOSFETs with strained Si channels on SiGe strain relaxed buffers due to self-heating

dc.contributor.authorAgaiby, R.
dc.contributor.authorO'Neill, A.G
dc.contributor.authorOlsen, S.H
dc.contributor.authorEneman, Geert
dc.contributor.authorVerheyen, Peter
dc.contributor.authorLoo, Roger
dc.contributor.authorClaeys, Cor
dc.date.accessioned2021-10-17T06:13:27Z
dc.date.available2021-10-17T06:13:27Z
dc.date.issued2008
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13291
dc.sourceIIOimport
dc.titleInsight into the aggravated lifetime reliability in advanced MOSFETs with strained Si channels on SiGe strain relaxed buffers due to self-heating
dc.typeJournal article
dc.contributor.imecauthorEneman, Geert
dc.contributor.imecauthorVerheyen, Peter
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecEneman, Geert::0000-0002-5849-3384
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.embargo9999-12-31
dc.source.peerreviewyes
dc.source.beginpage1568
dc.source.endpage1573
dc.source.journalIEEE Transactions on Electron Devices
dc.source.issue6
dc.source.volume55
imec.availabilityPublished - open access


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